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| MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS 3.20.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 * * * * * IT (RMS) ........................................................................ 3A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # .......................... 20mA (10mA) 5 Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 2 Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing 4.5 Conditions Commercial frequency, sine full wave 360 conduction, Tc=107C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 3.0 30 3.7 3 0.3 6 0.5 -40 ~ +125 -40 ~ +125 Unit A A A2s W W V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 2000 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C Test conditions Tj=125C, VDRM applied Tc=25C, ITM=4.5A, Instantaneous measurement Min. -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 20 5 20 5 20 5 -- 4.5 -- Unit mA V V V V mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- 0.2 -- 5 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1) Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 40 7 5 3 2 Tj = 25C 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III GATE VOLTAGE (V) 101 PG(AV) = 0.3W VGT IGM = 0.5A 7 5 3 2 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 102 7 5 3 2 PGM = 3W 100 7 5 3 2 IRGT I 102 IFGT I, IRGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) IFGT I, IRGT III VGD = 0.2V 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 5.0 4.5 4.0 360 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) 120 120 t2.3 120 100 80 60 40 20 0 0 1 2 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 8 3 4 5 6 7 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) DISTRIBUTION + T2 , G+ TYPICAL - T2 , G- EXAMPLE -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE Tj = 125C COMMUTATION CHARACTERISTICS 7 5 3 2 101 7 5 MINIMUM SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 I QUADRANT 0 1 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 III QUADRANT TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz III QUADRANT 3 CHARACTERISTICS 2 VALUE 100 I QUADRANT 70 23 5 7 101 10 23 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IRGT III IRGT I IFGT I GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS 3.20.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 * * * * * IT (RMS) ........................................................................ 3A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # .......................... 20mA (10mA) 5 Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 2 Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing 4.5 Conditions Commercial frequency, sine full wave 360 conduction, Tc=132C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 3.0 30 3.7 3 0.3 6 0.5 -40 ~ +150 -40 ~ +150 Unit A A A2s W W V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 2000 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Test conditions Tj=150C, VDRM applied Tc=25C, ITM=4.5A, Instantaneous measurement Min. -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 20 5 20 5 20 5 -- 4.5 -- Unit mA V V V V mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- Tj=125C/150C, VD=1/2VDRM Junction to case 3 Tj=125C/150C 0.2/0.1 -- 5/1 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT10mA) is also available. (IGT item1) Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 SURGE ON-STATE CURRENT (A) 7 5 RATED SURGE ON-STATE CURRENT 40 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 3 2 101 7 5 3 2 Tj = 150C 100 7 5 3 2 Tj = 25C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 0.5 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A GATE VOLTAGE (V) VGT GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 100 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IRGT I VGD = 0.1V 10-1 7 IFGT I, IRGT III 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) 102 IFGT I, IRGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 ON-STATE POWER DISSIPATION (W) 5.0 4.5 CASE TEMPERATURE (C) 140 CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) 4.0 360 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 120 120 t2.3 140 100 100 t2.3 60 60 t2.3 120 ALL FINS ARE BLACK PAINTED ALUMINUM 100 AND GREASED 80 NATURAL CONVECTION 60 CURVES APPLY REGARDLESS 40 OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS 0 1 2 3 4 5 6 7 0 8 RMS ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF 120 CONDUCTION ANGLE 100 RESISTIVE, INDUCTIVE LOADS 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE 100 (%) 106 103 7 5 4 3 2 TYPICAL EXAMPLE 104 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 105 102 7 5 4 3 2 103 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 103 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) 7 5 3 2 DISTRIBUTION 102 7 5 3 2 101 7 5 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) T2 , G TYPICAL - T2 , G- EXAMPLE + + BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 160 140 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 140 TYPICAL EXAMPLE Tj = 150C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 125C) 7 5 3 2 101 7 5 3 MINIMUM CHARAC2 TERISTICS VALUE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 150C) 7 5 3 2 101 7 5 3 2 100 70 10 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz III QUADRANT I QUADRANT MINIMUM CHARACTERISTICS VALUE III QUADRANT 100 I QUADRANT 70 10 23 5 7 101 23 5 7 102 23 5 7 101 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IRGT III IRGT I IFGT I GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (s) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM The product guaranteed maximum junction temperature 150C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6V V A RG 6V V A RG LOAD C1 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100 TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002 |
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